TY - JOUR T1 - Electrical properties of nitrogen-related defects in n-type GaAsN grown by molecular-beam epitaxy JO - Physica Status Solidi (C) Current Topics in Solid State Physics PY - 2009/01/01 AU - Shafi M AU - Mari RH AU - Henini M AU - Taylor D AU - Hopkinson M ED - DO - DOI: 10.1002/pssc.200982561 VL - 6 IS - 12 SP - 2652 EP - 2654 Y2 - 2025/08/18 ER -