TY - CONF
T1 - TEM analysis of dual column FIB processed Si/SiGe MOSFET device structures
JO - ELECTRON MICROSCOPY AND ANALYSIS 2003
PY - 2004/01/01
AU - Chang ACK
AU - Ross IM
AU - Norris D
AU - Cullis AG
ED - McVitie S
ED - McComb D
IS - 179
SP - 371
EP - 374
Y2 - 2025/07/26
ER -