TY - CONF T1 - The effect of dielectric stress on the electrical characteristics of AlGaN/GaN heterostructure field-effect transistors (HFETs) JO - EDMO 2002: 10TH IEEE INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS PY - 2002/01/01 AU - Tan WS AU - Hill G AU - Houston PA AU - Low MW AU - Parbrook PJ AU - Airey RJ ED - SP - 130 EP - 135 Y2 - 2025/08/18 ER -